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| BUZ 102 SL SPP47N05L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Logic Level * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 47 A RDS(on) 0.028 Package Ordering Code BUZ 102 SL TO-220 AB Q67040-S4010-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C TC = 100 C ID A 47 33 Pulsed drain current TC = 25 C IDpuls 188 E AS Avalanche energy, single pulse ID = 47 A, V DD = 25 V, RGS = 25 L = 222 H, Tj = 25 C mJ 245 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 47 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 47 12 A mJ kV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 C 14 120 V W Semiconductor Group 1 30/Jan/1998 BUZ 102 SL SPP47N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 C 1.25 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 90 A V GS(th) 1.2 IDSS 1.6 2 A Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 33 A V GS = 10 V, ID = 33 A 0.022 0.014 0.028 0.018 Semiconductor Group 2 30/Jan/1998 BUZ 102 SL SPP47N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 33 A gfs S 10 pF 1380 1730 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 410 515 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 230 290 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 47 A RG = 3.6 tr 15 25 Rise time V DD = 30 V, VGS = 4.5 V, ID = 47 A RG = 3.6 td(off) 30 45 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 47 A RG = 3.6 tf 30 45 Fall time V DD = 30 V, VGS = 4.5 V, ID = 47 A RG = 3.6 Qg(th) 20 30 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(5) 2 3 Gate charge at 5.0 V V DD = 40 V, ID = 47 A, VGS =0 to 5 V Qg(total) 35 55 Gate charge total V DD = 40 V, ID = 47 A, VGS =0 to 10 V V (plateau) 60 90 V Gate plateau voltage V DD = 40 V, ID = 47 A - 4.1 - Semiconductor Group 3 30/Jan/1998 BUZ 102 SL SPP47N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 47 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 188 V Inverse diode forward voltage V GS = 0 V, IF = 94 A trr 1.1 1.7 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 75 115 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.15 0.25 Semiconductor Group 4 30/Jan/1998 BUZ 102 SL SPP47N05L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 4 V 50 A ID 40 35 30 25 130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 C 180 20 15 10 5 0 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID V t = 21.0s p 10 0 ZthJC 10 -1 100 s 10 2 DS (o n) R = DS /I D 10 -2 D = 0.50 0.20 10 1 1 ms 10 -3 0.10 0.05 10 ms single pulse 10 -4 0.02 0.01 DC 10 0 0 10 1 2 10 V 10 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 30/Jan/1998 BUZ 102 SL SPP47N05L Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 110 A ID 90 f Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.09 Ptot = 120W l kj i h g VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 RDS (on)0.07 0.06 0.05 0.04 0.03 a b c d e 80 70 e d e f g 60 50 40 30 20 10 0 a b c d h i j k l f 0.02 0.01 0.00 V 5.0 0 10 20 30 40 50 60 70 80 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 i h 6.5 7.0 j 8.0 hi j k g k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 100 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 100 A I 80 70 60 50 40 30 20 10 0 0 D 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 30/Jan/1998 BUZ 102 SL SPP47N05L Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 33 A, VGS = 4.5 V 0.09 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 90A 3.0 V 2.6 VGS(th) RDS (on)0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 -20 20 60 100 C 180 98% typ 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj max typ min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 A C pF IF 10 2 Ciss 10 3 10 1 C oss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) Crss 10 2 0 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 30/Jan/1998 BUZ 102 SL SPP47N05L Avalanche energy EAS = (Tj) parameter: ID = 47 A, VDD = 25 V RGS = 25 , L = 222 H 260 mJ 220 EAS 200 180 160 140 Typ. gate charge VGS = (QGate) parameter: ID puls = 47 A 16 V VGS 12 10 8 120 100 80 60 40 20 0 20 40 60 80 100 120 140 C 180 0 0 10 20 30 40 50 60 70 nC 90 4 6 0,2 VDS max 0,8 VDS max 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 30/Jan/1998 |
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